Non-quasi-static (NQS) thermal noise modelling of the MOS transistor.
| Autor: | Porret, A.-S.1, Enz, C. C.2,3 |
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| Zdroj: | IEE Proceedings -- Circuits, Devices & Systems. Apr2004, Vol. 151 Issue 2, p155-166. 12p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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