Modeling the Deflection of Polarized Electrons with Energies in the Range 3.35-14 GeV in a Bent Silicon Crystal.
| Autor: | Koshcheev, V. P.1 koshcheev1@yandex.ru, Shtanov, Yu. N.2 yuran1987@mail.ru, Morgun, D. A.3,4 morgun_da@edu.surgu.ru, Panina, T. A.3 panina_surgu@mail.ru |
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| Zdroj: | Russian Physics Journal. Apr2018, Vol. 60 Issue 12, p2087-2094. 8p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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