Diversity of Properties of Device Structures Based on Group-III Nitrides, Related to Modification of the Fractal-Percolation System.
| Autor: | Emtsev, V. V.1, Gushchina, E. V.1, Petrov, V. N.1, Tal’nishnih, N. A.2, Chernyakov, A. E.2, Shabunina, E. I.1, Shmidt, N. M.1 Natalia.Shmidt@mail.ioffe.ru, Usikov, A. S.3, Kartashova, A. P.1, Zybin, A. A.4, Kozlovski, V. V.5, Kudoyarov, M. F.1, Saharov, A. V.1, Oganesyan, A. G.1, Poloskin, D. S.1, Lundin, V. V.1 |
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| Zdroj: | Semiconductors. Jul2018, Vol. 52 Issue 7, p942-949. 8p. |
| Databáze: | Academic Search Ultimate |
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