Effect of Deep Centers on Charge-Carrier Confinement in InGaN/GaN Quantum Wells and on LED Efficiency.
| Autor: | Bochkareva, N. I.1, Shreter, Y. G.1 y.shreter@mail.ioffe.ru |
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| Zdroj: | Semiconductors. Jul2018, Vol. 52 Issue 7, p934-941. 8p. |
| Databáze: | Academic Search Ultimate |
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