Dose Dependence of Nanocrystal Formation in Helium-Implanted Silicon Layers.

Autor: Lomov, A. A.1 lomov@ftian.ru, Myakon’kikh, A. V.1, Chesnokov, Yu. M.2, Denisov, V. V.3,4, Kirichenko, A. N.3, Denisov, V. N.3,4,5
Zdroj: Technical Physics Letters. Apr2018, Vol. 44 Issue 4, p291-294. 4p.
Databáze: Academic Search Ultimate