Production and annealing of the paramagnetic defects in as-grown and oxygen doped floating zone silicon irradiated with high fluence 3.5 MeV and 27 MeV electrons.
| Autor: | Joita, A.C.1,2, Nistor, S.V.1,2 snistor@infim.ro |
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| Zdroj: | Materials Science in Semiconductor Processing. Aug2018, Vol. 83, p1-11. 11p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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