Highly improved passivation of c-Si surfaces using a gradient i a-Si:H layer.

Autor: Lee, Soonil1, Ahn, Jaehyun1, Mathew, Leo2, Rao, Rajesh2, Zhang, Zhongjian1, Kim, Jae Hyun1, Banerjee, Sanjay K.1, Yu, Edward T.1
Zdroj: Journal of Applied Physics. 2018, Vol. 123 Issue 16, pN.PAG-N.PAG. 7p. 2 Charts, 6 Graphs.
Databáze: Academic Search Ultimate