Electrothermal simulations of high-power SOI vertical DMOS transistors with lateral drain contacts under unclamped inductive switching test

Autor:	Pinardi, Kuntjoro1 pinardi@rocketmail.com, Heinle, Ulrich2, Bengtsson, Stefan3, Olsson, Jörgen2, Colinge, Jean-Pierre4
Zdroj:	Solid-State Electronics. Jul2004, Vol. 48 Issue 7, p1119. 8p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu Full Text from ScienceDirect