Gate recess study for high thermal stability pHEMT devices.
| Autor: | Isa, M. Mohamad1 muammar@unimap.edu.my, Ahmad, N.1, Mat Isa, Siti S.1, Ramli, Muhammad M.1, Khalid, N.1, Nor, N. I. M.1, Kasjoo, S. R.1, Missous, M.2 |
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| Zdroj: | EPJ Web of Conferences. 2017, Vol. 162, p1-5. 5p. 3 Diagrams, 1 Chart, 6 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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