Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors.

Autor: Maleev, N.1 maleev@beam.ioffe.ru, Belyakov, V.2, Vasil'ev, A.2, Bobrov, M.1, Blokhin, S.1, Kulagina, M.1, Kuzmenkov, A.3, Nevedomskii, V.1, Guseva, Yu.1, Maleev, S.1, Ladenkov, I.2, Fefelova, E.2, Fefelov, A.2, Ustinov, V.
Zdroj: Semiconductors. Nov2017, Vol. 51 Issue 11, p1431-1434. 4p.
Databáze: Academic Search Ultimate