Capacitance spectroscopy of hole traps in high-resistance gallium-arsenide structures grown by liquid-phase epitaxy.
| Autor: | Murel, A.1, Shmagin, V.1, Krukov, V.2, Strelchenko, S.2, Surovegina, E.1 suroveginaka@ipmras.ru, Shashkin, V.1 |
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| Zdroj: | Semiconductors. Nov2017, Vol. 51 Issue 11, p1485-1489. 5p. |
| Databáze: | Academic Search Ultimate |
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