Activation energies of the InSi-Si i defect transitions obtained by carrier lifetime measurements.
Autor: | Lauer, Kevin1 klauer@cismst.de, Möller, Christian1, Teßmann, Christopher1,2, Schulze, Dirk2, Abrosimov, Nikolay V.3 |
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Zdroj: | Physica Status Solidi (C). May2017, Vol. 14 Issue 5, pn/a-N.PAG. 8p. |
Databáze: | Academic Search Ultimate |
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