Activation energies of the InSi-Si i defect transitions obtained by carrier lifetime measurements.

Autor: Lauer, Kevin1 klauer@cismst.de, Möller, Christian1, Teßmann, Christopher1,2, Schulze, Dirk2, Abrosimov, Nikolay V.3
Zdroj: Physica Status Solidi (C). May2017, Vol. 14 Issue 5, pn/a-N.PAG. 8p.
Databáze: Academic Search Ultimate