Using gapped topological surface states of Bi2Se3 films in a field effect transistor.
| Autor: | Jifeng Sun1, Singh, David J.1 singhdj@missouri.edu |
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| Zdroj: | Journal of Applied Physics. 2017, Vol. 121 Issue 6, p1-6. 6p. 2 Diagrams, 8 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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