Effect of In and Al Content on Characteristics of Intrinsic Defects in GaAs-Based Quantum Dots.
| Autor: | Bezyazychnaya, T. V.1, Zelenkovski&icaron;, V. M.1, Ryabtsev, G. I.2, Sobolev, M. M.3 m.sobolev@mail.ioffe.ru |
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| Zdroj: | Semiconductors. Feb2004, Vol. 38 Issue 2, p209-212. 4p. |
| Databáze: | Academic Search Ultimate |
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