Iron doped InGaAs: Competitive THz emitters and detectors fabricated from the same photoconductor.

Autor: Globisch, B.1 Bjoern.Globisch@hhi.fraunhofer.de, Dietz, R. J. B.1, Kohlhaas, R. B.1, Göbel, T.1, Schell, M.1, Alcer, D.2, Semtsiv, M.2, Masselink, W. T.2
Zdroj: Journal of Applied Physics. 2017, Vol. 121 Issue 5, p1-12. 12p. 1 Chart, 13 Graphs.
Databáze: Academic Search Ultimate