Comparison between Si/SiO and InP/AlO based MOSFETs.

Autor: Akbari Tochaei, A.1 amirakbari182@gmail.com, Arabshahi, H.2, Benam, M.1, Vatan-Khahan, A.3, Abedininia, M.3
Zdroj: Journal of Experimental & Theoretical Physics. Nov2016, Vol. 123 Issue 5, p869-874. 6p.
Databáze: Academic Search Ultimate