Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method.
| Autor: | Lobanov, D. dima@ipmras.ru, Novikov, A., Yunin, P.1, Skorohodov, E.1, Shaleev, M.1, Drozdov, M.1, Khrykin, O.1, Buzanov, O.2, Alenkov, V.2, Folomin, P.3, Gritsenko, A.3 |
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| Zdroj: | Semiconductors. Nov2016, Vol. 50 Issue 11, p1511-1514. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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