Pressure induced structural, electronic topological, and semiconductor to metal transition in AgBiSe2.
| Autor: | Rajaji, V.1, Malavi, Pallavi S.2, Yamijala, Sharma S. R. K. C.1, Sorb, Y. A.1, Dutta, Utpal2, Guin, Satya N.3, Joseph, B.4, Pati, Swapan K.5, Karmakar, S.2, Biswas, Kanishka3, Narayana, Chandrabhas1 cbhasi@gmail.com |
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| Zdroj: | Applied Physics Letters. 10/24/2016, Vol. 109 Issue 17, p171903-1-171903-5. 5p. 1 Chart, 5 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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