Resistive switching behavior of reduced graphene oxide memory cells for low power nonvolatile device application.

Autor: Pradhan, Sangram K.1, Xiao, Bo1, Mishra, Saswat1, Killam, Alex1, Pradhan, Aswini K.1
Zdroj: Scientific Reports. 6/3/2016, p26763. 1p.
Databáze: Academic Search Ultimate