Growth and characterization of highly tensile strained Ge1-xSnx formed on relaxed InyGa1-yP buffer layers.
| Autor: | Wei Wang1, Wan Khai Loke2, Tingting Yin3, Zheng Zhang4, D'Costa, Vijay Richard1, Yuan Dong1, Gengchiau Liang1, Jisheng Pan4, Zexiang Shen3, Soon Fatt Yoon2, Eng Soon Tok5, Yee-Chia Yeo1,6 yeo@ieee.org |
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| Zdroj: | Journal of Applied Physics. 3/28/2016, Vol. 119 Issue 12, p125303-1-125303-7. 7p. 2 Diagrams, 1 Chart, 6 Graphs. |
| Databáze: | Academic Search Ultimate |
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