Electronic topological transitions in Nb3X (X = Al, Ga, In, Ge, and Sn) under compression investigated by first principles calculations.
| Autor: | Sreenivasa Reddy, P. V.1, Kanchana, V.1 kanchana@iith.ac.in, Vaitheeswaran, G.2, Modak, P.3, Verma, Ashok K.3 |
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| Zdroj: | Journal of Applied Physics. 2/21/2016, Vol. 119 Issue 7, p075901-1-075901-15. 15p. 5 Color Photographs, 2 Charts, 12 Graphs. |
| Databáze: | Academic Search Ultimate |
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