Potential-based threshold voltage and subthreshold swing models for junctionless double-gate metal-oxide-semiconductor field-effect transistor with dual-material gate.
| Autor: | Wang, Ping1, Zhuang, Yiqi1, Li, Cong1, Liu, Yuqi1, Jiang, Zhi1 |
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| Zdroj: | International Journal of Numerical Modelling. Mar/Apr2016, Vol. 29 Issue 2, p230-242. 13p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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