External impacts on SiC nanostructures in pure and lightly doped silicon carbide crystals.

Autor: Vlaskina, S. I.1,2 businkaa@mail.ru, Mishinova, G. N.3, Vlaskin, V. I.4, Rodionov, V. E.2, Svechnikov, G. S.2
Zdroj: Semiconductor Physics, Quantum Electronics & Optoelectronics. 2015, Vol. 18 Issue 4, p448-451. 4p.
Databáze: Academic Search Ultimate