Temperature dependences of the photoluminescence intensities of centers in silicon implanted with erbium and oxygen ions.
| Autor: | Sobolev, N.1 nick@sobolev.ioffe.rssi.ru, Shtel'makh, K., Kalyadin, A.1, Shek, E.1 |
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| Zdroj: | Semiconductors. Dec2015, Vol. 49 Issue 12, p1651-1654. 4p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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