Pt-based metallization of PMOS devices for a compatible monolithic integration of semiconducting/Yba2Cu3O7−δ superconducting devices on silicon
| Autor: | Huot, G. g.huot@greyc.ismra.fr, Méchin, L.1, Bloyet, D.1 |
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| Zdroj: | Microelectronic Engineering. Nov2003, Vol. 70 Issue 2-4, p246. 5p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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