The effect of irradiation with H and Ne ions on resistive switching in metal-insulator-metal memristive structures based on SiO.

Autor: Belov, A.1, Mikhaylov, A.1, Korolev, D.1, Sergeev, V.1, Okulich, E.1, Antonov, I.1, Kasatkin, A.1, Gryaznov, E., Yatmanov, A.2, Gorshkov, O.1, Tetelbaum, D.1 tetelbaum@phys.unn.ru
Zdroj: Technical Physics Letters. Oct2015, Vol. 41 Issue 10, p957-960. 4p.
Databáze: Academic Search Ultimate