Far-infrared properties of helium-doped silicon.

Autor: Ren, Wei1, Zhou, Qingyan1, Li, Bing1, Deng, Hongxiang1, Han, Shaobo1, Liu, Wei1, Jiang, Yong2, Xiang, Xia1, Zu, Xiaotao1
Zdroj: Canadian Journal of Physics. Aug2015, Vol. 93 Issue 8, p935-940. 6p. 1 Black and White Photograph, 1 Diagram, 8 Graphs.
Databáze: Academic Search Ultimate