Silicon dopant passivation by nitrogen during molecular beam epitaxy of GaNAs.
| Autor: | Kuang, Y.1 yakuang@ucsd.eduyankuang@physics.ucsd.edu, Tu, C.2 |
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| Zdroj: | Applied Physics A: Materials Science & Processing. Aug2015, Vol. 120 Issue 2, p635-639. 5p. 3 Graphs. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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