Metamorphic Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures with High Electron Mobility Grown on GaAs Substrates.

Autor:	Semenova, E.S.1 esemenova@mail.ioffe.ru, Zhukov, A.E.1, Vasil'ev, A.P.1, Mikhrin, S.S.1, Kovsh, A.R.1, Ustinov, V.M.1, Musikhin, Yu.G.1, Blokhin, S.A.1, Gladyshev, A.G.1, Ledentsov, N.N.1
Zdroj:	Semiconductors. Sep2003, Vol. 37 Issue 9, p1104. 3p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu