Design consideration of GaAs-based blocked-impurity-band detector with the absorbing layer formed by ion implantation.
| Autor: | Wang, Xiaodong1 wxd06296@163.com, Wang, Bingbing1, Hou, Liwei1, Xie, Wei1, Chen, Xiaoyao2, Pan, Ming1 |
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| Zdroj: | Optical & Quantum Electronics. Jun2015, Vol. 47 Issue 6, p1347-1355. 9p. |
| Databáze: | Academic Search Ultimate |
| Externí odkaz: |
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