Low-temperature strain relaxation in SiGe/Si heterostructures implanted with Ge+ ions

Autor: Avrutin, V.S.1, Izyumskaya, N.F.1 natalia.izyumskaya@physik.uni-ulm.de, Vyatkin, A.F.1, Zinenko, V.I.1, Agafonov, Yu.A.1, Irzhak, D.V.1, Roshchupkin, D.V.1, Steinman, E.A.2, Vdovin, V.I.3, Yugova, T.G.4
Zdroj: Materials Science & Engineering: B. Jun2003, Vol. 100 Issue 1, p35. 5p.
Databáze: Academic Search Ultimate
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