Interface Ferroelectric Transition near the Gap-Opening Temperature in a Single-Unit-Cell FeSe Film Grown on Nb-Doped SrTiO3 Substrate.

Autor:	Cui, Y. T.1, Moore, R. G.1, Zhang, A. M.2, Tian, Y.2, Lee, J. J.1, Schmitt, F. T.1, Zhang, W. H.3, Li, W.1, Yi, M.1, Liu, Z. K.1, Hashimoto, M.4, Zhang, Y.4,5, Lu, D. H.4, Devereaux, T. P.1, Wang, L. L.3,6, Ma, X. C.3,6, Zhang, Q. M.2, Xue, Q. K.3,6, Lee, D. H.7,8, Shen, Z. X.1 zxshen@stanford.edu
Zdroj:	Physical Review Letters. 1/23/2015, Vol. 114 Issue 3, p037002-1-037002-5. 5p.
Databáze:	Academic Search Ultimate
Externí odkaz:	Zobrazit plný text záznamu