Structure and electronic properties of the 3C-SiC/SiGeC/Si(100) heterojunction formed by the vacuum chemical epitaxy method.
| Autor: | Orlov, L. orlov@ipm.sci-nnov.ru, Vdovin, V.1, Ivina, N., Shteinman, E'.2, Orlov, M., Drozdov, Yu.3, Petrova, V.4 |
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| Zdroj: | Journal of Structural Chemistry. Nov2014, Vol. 55 Issue 6, p1180-1189. 10p. |
| Databáze: | Academic Search Ultimate |
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