| Autor: |
Haschke, J.1 jan.haschke@helmholtz-berlin.de, Jogschies, L.1, Amkreutz, D.1, Korte, L.1, Rech, B.1 |
| Předmět: |
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| Zdroj: |
Solar Energy Materials & Solar Cells. Aug2013, Vol. 115, p7-10. 4p. |
| Abstrakt: |
Abstract: In this paper we present silicon heterojunction solar cells based on polycrystalline silicon (poly-Si) prepared by electron-beam induced liquid phase crystallisation. A single sided contact system has been developed to tap the full potential of the heterojunction concept. Open-circuit voltages as high as 582mV demonstrate the high potential of poly-Si absorber material. This is supported by a high pseudo fill factor of 80.5% as determined by Suns-V OC measurements. The still moderate best efficiency of 5.7% can be attributed to ohmic losses due to a broken front contact grid and to short circuit current densities not exceeding 16mAcm−2. The latter are largely explained by the missing light-trapping scheme and by recombination losses in the absorber or at the burried SiC/Si interface. The results demonstrate that open-circuit voltages above 600mV are in reach for poly-Si thin-film solar cells on glass, opening up exciting perspectives towards high efficiencies for a new type of potentially low cost silicon based thin-film solar cells. [Copyright &y& Elsevier] |
| Databáze: |
GreenFILE |
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Full Text from ScienceDirect