| Autor: |
Dullweber, T.1 t.dullweber@isfh.de, Kranz, C.1, Beier, B.1, Veith, B.1, Schmidt, J.1,2, Roos, B.F.P.3, Hohn, O.3, Dippell, T.3, Brendel, R.1,2 |
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| Zdroj: |
Solar Energy Materials & Solar Cells. May2013, Vol. 112, p196-201. 6p. |
| Abstrakt: |
Abstract: Passivated emitter and rear cells (PERC) are considered to be the next generation of industrial-type screen-printed silicon solar cells. Deposition methods for rear passivation layers have to meet both the high-throughput and low-cost requirements of the PV industry in combination with high-quality surface passivation properties. In this paper, we evaluate and optimise a novel deposition technique for AlO x passivation layers by applying an inductively coupled plasma (ICP) plasma-enhanced chemical vapour deposition (PECVD) process. The ICP AlO x deposition process enables high deposition rates up to 5nm/s as well as excellent surface recombination velocities below 10cm/s after firing. A fixed negative charge of −4×1012 cm−2 is measured for ICP AlO x single layers with an interface state density of 11.0×1011 eV−1 cm−2 at midgap position. When applied to PERC solar cells the ICP AlO x layer is capped with a PECVD SiN y layer. We achieve independently confirmed conversion efficiencies of up to 20.1% for large-area (15.6×15.6cm2) PERC solar cells with screen-printed metal contacts and ICP AlO x /SiN y rear side passivation on standard boron-doped Czochralski-grown silicon wafers. The internal quantum efficiency reveals an effective rear surface recombination velocity S rear of (90±30)cm/s and an internal rear reflectance R b of (91±1)% which demonstrates the excellent rear surface passivation of the ICP AlO x /SiN y layer stack. [Copyright &y& Elsevier] |
| Databáze: |
GreenFILE |
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