| Autor: |
Al Turkestani, M.K. mkturkestani@uqu.edu.sa, Durose, K.1 |
| Předmět: |
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| Zdroj: |
Solar Energy Materials & Solar Cells. Feb2011, Vol. 95 Issue 2, p491-496. 6p. |
| Abstrakt: |
Abstract: The origin of process-induced rectification in CdS/ITO and CdS/SnO2 bilayers has been investigated. Both pre-treatment of the transparent conducting oxide (TCO) substrates and post-growth treatment of the bilayers were explored for both oxidising and reducing conditions. In/CdS/TCO structures were used for I–V testing, and the CdS layers were verified as being pinhole-free using a test employing a rectifying Au/CdS contact. Whilst neither pre-oxidation nor reduction of any TCO substrate failed to induce rectification in CdS/TCO, oxidation of CdS always induced rectification, regardless of the substrate type. This was attributed to oxidation of CdS (confirmed by Auger electron spectroscopy), and the results are consistent with a band diagram postulated for the CdO/CdS/ITO structure. Recommendations are made for the fabrication of CdTe/CdS/TCO solar cells. [ABSTRACT FROM AUTHOR] |
| Databáze: |
GreenFILE |
| Externí odkaz: |
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