| Autor: |
Lush, G.B.1 lush@utep.edu |
| Předmět: |
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| Zdroj: |
Solar Energy Materials & Solar Cells. Aug2009, Vol. 93 Issue 8, p1225-1229. 5p. |
| Abstrakt: |
Abstract: Recombination and absorption measurements performed on double heterostructure films grown by metalorganic chemical vapor deposition are used to deduce , the coefficient of radiative recombination for n-type GaAs with electron concentrations () from to . The radiative and non-radiative components of recombination were separated and the effects of photon recycling were taken into account. It is found that for low , and that decreases significantly with increasing to as low as for . [Copyright &y& Elsevier] |
| Databáze: |
GreenFILE |
| Externí odkaz: |
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