| Autor: |
Libraro, S.1 (AUTHOR) sofia.libraro@epfl.ch, Lehmann, M.1 (AUTHOR), Leon, J.J. Diaz2 (AUTHOR), Allebé, C.2 (AUTHOR), Descoeudres, A.2 (AUTHOR), Ingenito, A.2 (AUTHOR), Ballif, C.1,2 (AUTHOR), Hessler-Wyser, A.1 (AUTHOR), Haug, F.-J.1 (AUTHOR) |
| Předmět: |
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| Zdroj: |
Solar Energy Materials & Solar Cells. Jan2023, Vol. 249, pN.PAG-N.PAG. 1p. |
| Abstrakt: |
Replacing silver metallization with earth-abundant materials in Si solar cells is a critical step towards the sustainable growth of photovoltaics. In this work, we investigate fire-through processes using Al for the metallization of solar cells with p-type passivating contacts, with the goal to achieve a thin depth of contact, oppositely to what is used for standard back-surface field Al contacts. The interactions taking place during firing between the different elements in our contact stack (Al, SiN x :H, SiC x (p) and tunnel SiO x) are studied. We discuss how Al and SiN x react during firing by performing contact formation through different nitride layers, and show that increasing the N content of the silicon nitride can reduce Al penetration depth. Finally, we also investigate the mechanisms behind metal-induced passivation degradation and identify possible ways of mitigating them by employing an adapted SiO x /SiC x stack to allow for Ag-free metallization of tunnel oxide passivating contacts. • Metallization of fireable rear side passivating contacts. • Contact formation through silicon nitride with aluminium paste. • Understanding of interactions between different layers during firing. • Characterization of contacts by multiscale electron microscopy. [ABSTRACT FROM AUTHOR] |
| Databáze: |
GreenFILE |
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Full Text from ScienceDirect