The development of dielectric materials of multilayer ceramic capacitor for high-temperature stability application
| Autor: | CHEN,YAN-SHENG, 陳莚升 |
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| Rok vydání: | 2017 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 105 In this study, BaTiO3-(Bi0.5Na0.5)TiO3 ceramics with various amounts of Ta2O5 dopant were investigated for their ability to enhance high-temperature stability to meet X9R specifications. The best composition appeared to be 0.9BaTiO3-0.1(Bi0.5Na0.5)TiO3 - 4 mol% Ta2O5 with 0.01 mol% dopant sintered at 1215 °C, which had a dielectric constant of 1037, a tanδ value of 1.17%, temperature coefficients of capacitance (TCCs) of −4.30% and- 13.81%, respectively. The Ta2O5 dopant caused a reduction in the grain size and a slight increase in trapped pores. The temperature dependence of the dielectric constant flattened and the Curie point was dramatically suppressed with the addition of Ta2O5 dopant, leading to smooth dielectric temperature characteristics over a relatively broad temperature range. The X9R formulations and their dielectric properties were highly repeatable in this study. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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