Optimization in laser grooving process of IC package for thick metal layer
| Autor: | Hung,Chia-Wei, 洪嘉偉 |
|---|---|
| Rok vydání: | 2016 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 104 In the field of semiconductor packaging, with the progress of time, a variety of 3C electronic product development are toward light, thin, short, small multi-functional design. However, the most front-end process of designing and manufacturing the wafer is to be consistent with this requirement, the semiconductor manufacturing process by the micron to sub-micron, and then proceeds to the nanometer level process. The semiconductor industry need to solve the considerable and serious problem, and the first question to bear the brunt of wafer fabrication is the signal delay (RC delay). The main solution to the signal delay (RC Delay) is to use low dielectric (Low K) material to enhance the effectiveness of the product. The addition of a low dielectric (Low K) material in the wafer design, and is must by the multi-layer metal to make the dielectric can be effectively reduced. But metal layers increases, the more its thick metal thickness. The wafer cutting process, it means one big challenge. Therefore, laser grooving process would be indispensable at this time. The current low dielectric (Low K) wafer designed metal thickness always in 4 to 8 um, With the low-nanometer wafer process comes, the initial design parameters will can’t meet the gradually thick metal. The paper is for add low dielectric (Low K) metal layer thickness is greater than 10 um to low-nanometer wafer fabrication, use the response surface methodology (R.S.M) to study and obtained optimizing laser grooving parameters. Improve the efficiency of the experiment without affecting the production line. Then apply SPC systems to statistical results corresponding to the process capability Index (CPK), support this optimal parameter can be applied to the laser grooving of semiconductor process. Further to meet customer quality demand and improve the competitiveness. Key word: low dielectric (Low K) material, Laser grooving, Response surface methodology, Process capability index. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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