The effect of thermal annealing on electrical properties of ITO
| Autor: | Shan Leng, 冷杉 |
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| Rok vydání: | 2015 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 103 This thesis studies the temperature dependence of resistance and uses the Seebeck effect to obtain the carrier concentration in the indium tin oxide (ITO) films which have been annealed. We annealed two sets of indium tin oxide in different temperatures—one through helium gas and the other through oxygen gas. Since the higher the temperature, the greater the thermopower, we could observe the change of the carrier concentration. It is believed that the fabrication of ITO films would cause some oxygen to stay inside, and the oxygen will repair the oxygen vacancy. Having analyzed experience samples with XPS, we found that there was some oxygen contaminant on the surface of the samples, and the amount of oxygen vacancies also decreased. It complied with our result. We measured the temperature dependence of resistance of samples. Then, we fitted our data with resistivity function. There was about 0.1 debye temperature in fitting parameter, and it distinguished the contribution to the different scattering mechanism in different temperature. By fitting the data to Bloch-Grüneisen theorem, we found that there was a linear association parameter ρ0 and β We had thought that the variation of β was affected by electric properties, but the result suggested that it had more to do with the degree of disorder. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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