optical and electrical characterizations of the InGaN films and rapid thermal annealing effects on InGaN films with different indium compositions
| Autor: | Chien-Feng Chiu, 邱健峰 |
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| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 103 In this study, we used molecular beam epitaxy system to grow InxGa1-XN thin film with different indium compositions from 20 to 80 % on sapphire substrate. We thoroughly by X-ray diffraction, scanning electron microscope, the photoconductive spectrum, Hall measurements and Photoluminescence spectroscopy to investigate the optical and electrical properties, therefore, we can confirm the size of the lattice parameters, the indium content and stressed by the X-ray diffraction, From the Photoluminescence and photoconductive spectra to discover the energy gap position to observe the changes in mobility by Hall measurements. After half of the study we performed rapid thermal annealing (RTA) at temperature of 600 ℃ and investigated RTA effect on the optical and electrical properties of InxGa1-XN samples. Combining Hall effect measurement results, we find the crystal quality of the samples with lower indium 20 % and 40 % compositions have been improved after RTA treatment. However, the crystal quality of InxGa1-XN films with higher indium 60% and 80 % compositions is difficult to be improved by RTA method due to low decomposition temperature. A series of experiments provide a useful guideline to achieve crystal improvement of InxGa1-XN using RTA. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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