Resistive Switching and Magneto-transport Properties inOrganic Spin Valve with Self-assembled MonolayerSpacer
| Autor: | Shih-Hang Chang, 張士航 |
|---|---|
| Rok vydání: | 2013 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 101 In this study, self-assembled monolayer (SAM) is applied into organic spin valves (OSVs) as a monolayer spacer to reduce the local contact geometry issue. Self-assembled monolayer is one kind of molecular materials would form spontaneously on certain substrate and is organized into a high quality monolayer, which provides well-ordered molecular barrier in OSVs. The devices show magnetoresistance of 0.3% at room temperature and up to 2.5% at 20K. Interestingly, The organic spin valve also shows the fingerprint of memristor, and a resistive switching between a low resistance state and a high resistance state. And the write- read-erase-read cycles is presented by applying current pulse. To understand how charge transport in self-assembled monolayer and what cause the resistive switching, models, such as Simmons'' formula, was applied to fit the I-V curve and to speculate a reasonable explanation. In brief, combining magnetic and electric memory effects in an organic spin valve, the device has potential for application to a multifunctional memory device. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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