Investigation of Fully Integrated SiGe RF Power Amplifier Design and Patch Antenna
| Autor: | Yu-Yuan Hsiao, 蕭瑜源 |
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| Rok vydání: | 2011 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 99 This study focuses on fully integrated radio frequency power amplifier by using TSMC 0.35μm BiCMOS process and 0.18μm BiCMOS process. In the first part, a fully integrated power amplifier by using power combining is studied first. The major key consideration is focused on how to properly choose inductance from impedance transformation ratio. The simulated performances are the output power at 1dB gain compression (OP1dB) 28 dBm, power added efficiency (PAE) 38% and power gain 17 dB. The second part of this thesis is designed for a no power consumption at turned-off state. A cascaded bias current mirror is employed herein. It can keeps the advantage of linearity of traditional bias current mirror structure. The simulated performances based on 25oC junction temperature are output power at 1dB gain compression is 23 dBm, power added efficiency 30% and power gain 10 dB. The measured are output at 1dB gain compression is 21dBm, power added efficiency 18.2% and power gain 8.2 dB. The deviation between simulation and measurement is due to the device junction temperature. As checked with the dc and ac performances, the junction temperature under measurement should be at 145 oC. Finally, a topic about antenna design model is discussed. As disclosed in the published literatures, many designers are devoted themselves to different structure of antenna such as single, dual, or multi-band. However, systematically designing method is lack. So, an antenna model is also investigated in this study. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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