Investigation of Ternary Oxide Materials LaAlO3 as Gate Dielectric by PLD

Autor:	Wen Sheng Feng, 馮文聲
Druh dokumentu:	學位論文 ; thesis
Popis:	98 In this thesis, we have studied the fabricated of metal-insulator-metal oxide (MIM) capacitors structure. We deposited high dielectric constant LaAlO3 by pulsed laser deposition. Study electrical and physical characterization deposited with different oxygen partial pressure. In addition, a post-annealing treatment can heal oxygen vacancies of LaAlO3 films in oxygen ambient. Therefore, the insulator film can be improved leakage current, breakdown field, capacitor density, and charge trapping of characteristic. The exhibit was better quality including lower leakage density (10-10 A/cm2), and higher breakdown field (11MV/cm). Then, we fabricated thin film transistor using IZO as channel layer, ITO as gate dielectric, and Al as source/drain electrode. Electrical characteristics of thin film transistor showed that the field effect saturation mobility, on/off ratio, sub-threshold swing, and threshold voltage were extracted to be 8.34 cm2/V-s, 2.2×105, 0.57 V/decade, and 3.2 V, respectively.
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://ndltd.ncl.edu.tw/handle/32575508284474455331 Zobrazit plný text záznamu