Study of InP-Based Enhancement-Mode Metal-Oxide-Semiconductor Field-Effect Transistors with High-K Gate Dielectrics

Autor:	Wei Jen Hsueh, 薛惟仁
Rok vydání:	2009
Druh dokumentu:	學位論文 ; thesis
Popis:	97 The thesis is aimed to simulate the device properties of enhancement-mode InP-based In0.53Ga0.47As metal-oxide-semiconductor field-effect transistors (MOSFET) using APSYS commercial software. The device characteristics investigated include DC current-voltage characteristics, transfer curve, capacitance effect, on/off ratio and subthreshold swing. We focus on various dielectric materials, increased indium compositions in the channel, composite gate dielectrics, gate oxide thickness,and short channel effect. Finally we try to improve the short channel effect by changing the doping concentration, using different oxide thicknesses, employing composite gate dielectrics and utilizing the structure of lightly doped drain (LDD).
Databáze:	Networked Digital Library of Theses & Dissertations
Externí odkaz:	http://ndltd.ncl.edu.tw/handle/62176494365636642138 Zobrazit plný text záznamu