High Quality Ultra-thin Gate Oxides Prepared by Tensile-Stress Anodization Technique
| Autor: | Chih-Ching Wang, 王志慶 |
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| Rok vydání: | 2007 |
| Druh dokumentu: | 學位論文 ; thesis |
| Popis: | 95 As MOS devices are scaled down to the deep-submicrometer region, the thickness of silicon oxide also scales down. Based on the International Technology Roadmap for Semiconductor (ITRS), the equivalent oxide thickness (EOT) should be 0.6 nm in 2013. The ultra-thin gate silicon dioxide is too leaky; therefore, high-k films are introduced. However, due to poor reliability problems, silicon dioxide is still the main stream is the near future. Thus, it is still crucial to improve the oxide quality. In this thesis, we will focus on the effects of mechanical tensile stress during oxidation on oxide quality and reliability issues of MOS capacitors via the study of the electrical characteristics. In chapter 1, we introduced experimental and analysis tools, and also compared the thermal oxides, chemical oxides, and anodized oxides. We realize that anodized oxides exhibiting better electrical characteristics, and could be prepared at room temperature. Thus, the anodized oxides are adopted. In chapter 2, we investigate the effects and electrical characteristics of the MOS capacitors after applying mechanical tensile stress during anodization process. From the experimental results, we could acquire high quality MOS capacitors after applying suitable tensile stress during anodization process. In chapter 3, the reliability properties of the Non-Stress and Tensile-Stress samples, including time-dependent-dielectric-breakdown (TDDB) and the stress-induced-leakage current (SILC) are examined. After these tests, we find that the samples after suitable tensile stress during oxidation exhibit the improved breakdown endurance and the reduced SILC. Finally, a conclusion and some other suggestions were given. |
| Databáze: | Networked Digital Library of Theses & Dissertations |
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