GaAs-based epitaxial structures for heterojunction bipolar transistors with increased efficiency

Autor: Welty, Rebecca J.
Jazyk: angličtina
Rok vydání: 2002
Zdroj: Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses
Druh dokumentu: Dissertations, Academic
Popis: Thesis (Ph. D.)--University of California, San Diego, 2002.
Vita. Includes bibliographical references.
Databáze: Networked Digital Library of Theses & Dissertations