Characterization of the novel ICeGaN 650V/ 8.5 A, 200 mΩ power device technology
| Autor: | Mukherjee, K., Arnold, M., Zhang, J., Ledins, K., Michalak, M., Fung, O., Efthymiou, L., Ansari, Z., Longobardi, G., Udrea, F. |
|---|---|
| Zdroj: | In Power Electronic Devices and Components June 2023 5 |
| Databáze: | ScienceDirect |
| Externí odkaz: |
|