Transport and electronic structure properties of MBE grown Sn doped Ga2O3 homo-epitaxial films

Autor: Kuang, Siliang, Yang, Zhenni, Zhang, Ziqi, Sheng, Ziqian, Wei, Shenglong, Chen, Yihong, Xu, Wenjing, Yang, Ye, Chen, Duanyang, Qi, Hongji, Zhang, Kelvin H.L.
Zdroj: In Materials Today Physics November 2024 48
Databáze: ScienceDirect